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| INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION *High Current-Gain Bandwidth Product fT= 2400MHz TYP. @VCE = 10 V, IC = 2 mA *Low Noise APPLICATIONS *TV tuner , UHF mixer applications *VHF~UHF band RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature 25 mA PC 0.1 W TJ 125 Tstg Storage Temperature Range -55~125 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4245 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 A IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1.0 A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V hFE DC Current Gain IC= 5mA ; VCE= 10V 40 200 fT Current-Gain--Bandwidth Product IC= 2mA ; VCE= 10V 1500 2400 MHz Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.6 0.9 pF Gce Conversion Gain IC= 2mA ; VCC= 10V; f= 800MHz fL= 830MHz(+2dBm) 12 17 dB NF Noise Figure 8 13 dB isc Websitewww.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4245 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4245 isc Websitewww.iscsemi.cn 4 |
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